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15C01M
No.7505-1/4
NPN Epitaxial Planar Silicon Transistor
Applications
•
Low-frequency Amplifier, muting circuit.
Features
•
Large current capacitance.
•
Low collector-to-emitter saturation voltage (resistance).
R
CE
(sat) typ.=0.58Ω [I
C
=0.7A, I
B
=35mA].
•
Ultrasmall package facilitates miniaturization in end
products.
• Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
20 V
Collector-to-Emitter Voltage V
CEO
15 V
Emitter-to-Base Voltage V
EBO
5V
Collector Current I
C
700 mA
Collector Current (Pulse) I
CP
1.4 A
Collector Dissipation P
C
Mounted on a glass epoxy board (20✕30✕1.6mm) 300 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=15V, I
E
=0 0.1 µA
Emitter Cutoff Current I
EBO
V
EB
=4V, I
C
=0 0.1 µA
DC Current Gain h
FE
V
CE
=2V, I
C
=10mA 300 800
Gain-Bandwidth Product f
T
V
CE
=2V, I
C
=50mA 330 MHz
Output Capacitance Cob V
CB
=10V, f=1MHz 3.2 pF
Collector-to-Emitter Saturation Voltage V
CE
(sat) I
C
=200mA, I
B
=10mA 150 300 mV
Base-to-Emitter Saturation Voltage V
BE
(sat) I
C
=200mA, I
B
=10mA 0.9 1.2 V
Marking : YP Continued on next page.
Ordering number : ENN7505
15C01M
O3003 TS IM TA-3683
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2059B
[15C01M]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
0.3
0.65
0.65
2.0
0.425
1.250
2.1
0.425
0.15
0 to 0.1
0.2
0.3 0.6
0.9
12
3
Verzeichnis
