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2SA1709 / 2SC4489
No.3096-1/7
Features
•
Adoption of FBET, MBIT processes
•
High breakdown voltage, large current capacity
•
Fast switching speed
( )2SA1709
Specifi cations
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--)120 V
Collector-to-Emitter Voltage V
CEO
(--)100 V
Emitter-to-Base Voltage V
EBO
(--)6 V
Collector Current I
C
(--)2 A
Collector Current (Pulse) I
CP
(--)3 A
Collector Dissipation P
C
1W
Junction Temperature Tj 150
°
C
Storage Temperature Tstg --55 to +150
°
C
Package Dimensions
unit : mm (typ)
7540-001
Ordering number : EN3096A
82912 TKIM TC-00002803/40804TN(PC)/5169MO, TS
SANYO Semiconductors
DATA SHEET
2SA1709/2SC4489
PNP/NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package : NMP(Taping)
•
JEITA, JEDEC : SC-71
•
Minimum Packing Quantity : 2,500 pcs./box
Marking(NMP(Taping))
Electrical Connection
2
1
3
2SC4489
2
1
3
2SA1709
A1709
LOT No.
RANK
C4489
LOT No.
RANK
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP(Taping)
6.9
321
2.5
1.051.45
2.542.54
1.0
0.6
0.45
0.5
0.9
4.5
1.01.0
15.0
2SA1709S-AN
2SA1709T-AN
2SC4489S-AN
2SC4489T-AN
Verzeichnis
