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2SC6099
No. A0435-1/9
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
•
Adoption of FBET, MBIT process
•
Large current capacity
•
Low collector-to-emitter saturation voltage
•
High-speed switching
•
High allowable power dissipation
Specifi cations
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
120 V
Collector-to-Emitter Voltage V
CES
120 V
Collector-to-Emitter Voltage V
CEO
100 V
Emitter-to-Base Voltage V
EBO
6.5 V
Collector Current I
C
2A
Collector Current (Pulse) I
CP
3A
Base Current I
B
400 mA
Continued on next page.
Package Dimensions
unit : mm (typ)
Package Dimensions
unit : mm (typ)
7518-003 7003-003
Ordering number : ENA0435A
80812 TKIM/62006EA MSIM TB-00002424
SANYO Semiconductors
DATA SHEET
2SC6099
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package : TP • Package : TP-FA
•
JEITA, JEDEC : S
C-64, TO-251 •
JEITA, JEDEC :
SC-63, TO-252
•
Minimum Packing Quantity
:
500 pcs./bag •
Minimum Packing Quantity
:
700 pcs./reel
Marking Packing Type (TP-FA) : TL Electrical Connection
(TP, TP-FA)
TL
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6
0.5
2.3 2.3
7.07.5
1.6
0.8
5.5
1.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5
1.5
0.8
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-F
A
C6099
LOT No.
2,4
3
1
2SC6099-E 2SC6099-TL-E
Verzeichnis