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2SB892 / 2SD1207
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Applications
• Power supplies, relay drivers, lamp drivers, and automotive wiring.
Features
• FBET and MBIT processed (Original process of SANYO).
• Low saturation voltage.
• Large current capacity and wide ASO.
Specifications ( ) : 2SB892
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--)60 V
Collector-to-Emitter Voltage V
CEO
(--)50 V
Emitter-to-Base Voltage V
EBO
(--)6 V
Collector Current I
C
(--)2 A
Collector Current (Pulse) I
CP
(--)4 A
Collector Dissipation P
C
1W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=(--)50V, I
E
=0A (--)0.1 µA
Emitter Cutoff Current I
EBO
V
EB
=(--)4V, I
C
=0A (--)0.1 µA
Continued on next page.
2SB892 / 2SD1207
PNP / NPN Epitaxial Planar Silicon Transistors
Large-Current Switching Applications
Ordering number : EN930D
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Publication Order Number:
2SB892_2SD1207/D
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