1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2157
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
5.7 ±0.1
2.0 ±0.2
S
G
1.5 ±0.1
0.41 ±0.05
4.2
0.85 ±0.1
2.1
0.5 ±0.1
1.0
0.5 ±0.1
3.65 ±0.1
5.4 ±0.25
D
0.55
EQUIVALENT CIRCUIT
Source (S)
Internal diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Markin
g
: NA4
The 2SK2157 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V. This product has a low ON resistance and
superb switching characteristics and is ideal for driving the actua-
tors and DC/DC converters.
FEATURES
• New package intermediate between small-signal and power
models
• Can be directly driven by output of 5-V IC
• Low ON resistance
R
DS(on) ≤ 0.15 Ω @VGS = 4 V, ID = 2.5 A
RDS(on) ≤ 0.10 Ω @VGS = 10 V, ID = 2.5 A
Document No. D11233EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 30 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±10.0 A
Duty cycle ≤ 50 %
Total Power Dissipation PT 7.5 cm
2
× 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Verzeichnis
