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30C02CH-TL-E
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30C02CH-TL-E Anwendungshinweis - ON Semiconductor

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30C02CH-TL-E Anwendungshinweis

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30C02CH
No.7363-1/4
Applications
Low-frequency Amplifier, high-speed switching,
small motor drive.
Features
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
R
CE
(sat) typ=330m[I
C
=0.7A, I
B
=35mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
40 V
Collector-to-Emitter Voltage V
CEO
30 V
Emitter-to-Base Voltage V
EBO
5V
Collector Current I
C
700 mA
Collector Current (Pulse) I
CP
1.4 A
Collector Dissipation P
C
Mounted on a ceramic board (600mm
2
0.8mm) 700 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=30V, I
E
=0 100 nA
Emitter Cutoff Current I
EBO
V
EB
=4V, I
C
=0 100 nA
DC Current Gain h
FE
V
CE
=2V, I
C
=50mA 300 800
Gain-Bandwidth Product f
T
V
CE
=10V, I
C
=50mA 540 MHz
Marking : CL Continued on next page.
NPN Epitaxial Planar Silicon Transistor
Ordering number : ENN7363
30C02CH
O2203 TS IM TA-100140
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2150A
[30C02CH]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
0.05
0.9
0.7 0.2
1.6 0.60.6
1.9
1
2
3
2.8
0.2
2.9
0.15
0.4
Verzeichnis

30C02CH-TL-E Datenblatt-PDF

30C02CH-TL-E Datenblatt PDF
ON Semiconductor
6 Seiten, 527 KB
30C02CH-TL-E Anderes Datenblatt
ON Semiconductor
11 Seiten, 3720 KB
30C02CH-TL-E Anwendungshinweis
ON Semiconductor
4 Seiten, 35 KB

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