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55GN01F
No.8149-1/8
Features
•
High cut-off frequency : f
T
= 5.5GHz typ.
•
High gain : S21e
2
=11dB typ (f=1GHz).
=19dB typ (f=400MHz).
• Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
20 V
Collector-to-Emitter Voltage V
CEO
10 V
Emitter-to-Base Voltage V
EBO
3V
Collector Current I
C
70 mA
Collector Dissipation P
C
250 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=10V, I
E
=0 0.1 µA
Emitter Cutoff Current I
EBO
V
EB
=2V, I
C
=0 1 µA
DC Current Gain h
FE
V
CE
=5V, I
C
=10mA 100 160
Gain-Bandwidth Product
f
T
1V
CE
=3V, I
C
=5mA 3.0 4.5 GHz
f
T
2V
CE
=5V, I
C
=20mA 5.5 GHz
Output Capacitance Cob V
CB
=10V, f=1MHz 0.95 1.2 pF
Reverse Transfer Capacitance Cre V
CB
=10V, f=1MHz 0.6 pF
Forward Transfer Gain
S21e
2
1V
CE
=5V, I
C
=20mA, f=1GHz 8 11 dB
S21e
2
2V
CE
=5V, I
C
=20mA, f=400MHz 16 19 dB
Noise Figure NF V
CE
=3V, I
C
=5mA, f=1GHz, Z
S
=Z
L
=50Ω 1.9 dB
Marking : ZD
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8149
21805AB TS IM TB-00000898
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
55GN01F
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise Amplifier
Applications
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