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MMRF1008H MMRF1008HS MMRF1008GH
1
RF Device Data
Freescale Semiconductor , Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF power trans istors designed for applications operating at frequencies
from 900 to 1215 MHz. These devices are s uitable for use in defense and
commercial pulse applications, such as IFF and DME.
Typical Pulse Performance: V
DD
=50Vdc,I
DQ
= 100 mA, P
out
=
275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128
sec,
Duty Cycle = 10%
Power Gain — 20.3 dB
Drain Efficiency — 65.5%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
Typical Broadband Performance: V
DD
=50Vdc,I
DQ
= 100 mA, P
out
=
250 W Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width =
128
sec, Duty Cycle = 10%
Power Gain — 19.8 dB
Drain Efficiency — 58%
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
960--1215 MHz, 275 W, 50 V
PULSE
LATERAL N--CHANNEL
RF POWER MOSFETs
MMRF1008H
MMRF1008HS
MMRF1008GH
Note: The backside of the package is the
source terminal for the transistor.
(Top View)
Drain
21
Figure 1. Pin Connections
Gate
NI--780H--2L
MMRF1008H
NI--780S--2L
MMRF1008HS
NI--780GH--2L
MMRF1008GH
Document Number: MMRF1008H
Rev. 1, 5/2016
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2013, 2016.
A
ll rights reserved.
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