herunterladen
Feb-03-2003
1
BAS116...
Silicon Low Leakage Diode
Low-leakage applications
Medium speed switching times
BAS116
3
12
Type Package Configuration Marking
BAS116 SOT23 single JVs
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
80 V
Peak reverse voltage V
RM
85
Forward current I
F
250 mA
Surge forward current I
FS
4.5 A
Total power dissipation
T
S
54°C
P
tot
370 mW
Storage temperature T
st
g
-65 ... 150
°C
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
BAS116
R
thJS
260
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
