© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 7
1 Publication Order Number:
BAS70LT1/D
BAS70LT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 150°C unless otherwise noted)
Rating Symbol Value Unit
Forward Current I
F
70 mA
Non−Repetitive Peak Forward Surge
Current (t ≤ 1.0 s)
I
FSM
100 mA
Reverse Voltage V
R
70 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
225
1.8
mW
mW/°C
Operating Junction and Storage
Temperature Range
T
J,
T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT−23
CASE 318
STYLE 8
http://onsemi.com
BE Specific Device Code
M = Date Code*
G = Pb−Free Package
MARKING DIAGRAM
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
BAS70LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
70 VOLTS SCHOTTKY
BARRIER DIODES
1
BE M G
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
Verzeichnis
