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© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 10
1 Publication Order Number:
BAS40−04LT1/D
BAS40-04LT1G
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
40 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
225
1.8
mW
mW/°C
Operating Junction and Storage Temper-
ature Range
T
J,
T
stg
−55 to
+150
°C
Forward Continuous Current I
FM
120 mA
Single Forward Current t v 1 s
t v 10 ms
I
FSM
200
600
mA
Thermal Resistance
Junction−to−Ambient
R
q
JA
508
(Note 1)
311
(Note 2)
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
SOT−23 (TO−236AB)
CASE 318
STYLE 11
40 VOLTS
SCHOTTKY BARRIER DIODES
MARKING
DIAGRAM
CB = Specific Device Code
M = Date Code*
G = Pb−Free Package
1
2
3
ANODE
1
CATHODE
2
3
CATHODE/ANODE
BAS40−04LT1G SOT−23
(Pb−Free)
3000/ Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
CB MG
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
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