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©2000 Fairchild Semiconductor International Rev. A, February 2000
BD136/138/140
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
h
FE
Classificntion
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BD136
: BD138
: BD140
- 45
- 60
- 80
V
V
V
V
CEO
Collector-Emitter Voltage : BD136
: BD138
: BD140
- 45
- 60
- 80
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 1.5 A
I
CP
Collector Current (Pulse) - 3.0 A
I
B
Base Current - 0.5 A
P
C
Collector Dissipation (T
C
=25°C) 12.5 W
P
C
Collector Dissipation (T
a
=25°C) 1.25 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD136
: BD138
: BD140
I
C
= - 30mA, I
B
= 0 - 45
- 60
- 80
V
V
V
I
CBO
Collector Cut-off Current V
CB
= - 30V, I
E
= 0 - 0.1 µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 10 µA
h
FE1
h
FE2
h
FE3
* DC Current Gain V
CE
= - 2V, I
C
= - 5mA
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 2V, I
C
= - 150mA
25
25
40 250
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 500mA, I
B
= - 50mA - 0.5 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= - 2V, I
C
= - 0.5A - 1 V
Classification 6 10 16
h
FE3
40 ~ 100 63 ~ 160 100 ~ 250
BD136/138/140
Medium Power Linear and Switching
Applications
• Complement to BD135, BD137 and BD139 respectively
1
TO-126
1. Emitter 2.Collector 3.Base
Verzeichnis
