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© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 7
1 Publication Order Number:
BD159/D
BD159G
Plastic Medium-Power
Silicon NPN Transistor
This device is designed for power output stages for television, radio,
phonograph and other consumer product applications.
Features
• Suitable for Transformerless, Line−Operated Equipment
• Thermopadt Construction Provides High Power Dissipation Rating
for High Reliability
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
350 Vdc
Collector−Base Voltage V
CB
375 Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
0.5 Adc
Collector Current − Peak I
CM
1.0 Adc
Base Current I
B
0.25 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
20
0.16
W
mW/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
6.25
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS, 20 WATTS
http://onsemi.com
BD159G
TO−225
(Pb−Free)
500 Units/Box
MARKING DIAGRAM
Y = Year
WW = Work Week
BD159 = Device Code
G = Pb−Free Package
3
BASE
1
EMITTER
COLLECTOR
2, 4
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
BD159G
Verzeichnis
