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DMN2009LSS-13
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DMN2009LSS-13 Anwendungshinweis - Diodes

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DMN2009LSS-13 Anwendungshinweis

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DMN2009LSS
Document number: DS31409 Rev. 7 - 2
1 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMN2009LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
20V
8m @ V
GS
= 10V
12A
9m @ V
GS
= 4.5V
10A
12m @ V
GS
= 2.5V
8A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN2009LSS-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
TOP VIEW
Top View
Internal Schematic
D
S
G
DS
D
D
D
S
S
G
Equivalent circuit
Chengdu A/T Site Shanghai A/T Site
= Manufacturer’s Marking
N2009LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 4
8 5
N2009LS
WW
YY
1 4
8 5
N2009LS
WW
YY
Verzeichnis

DMN2009LSS-13 Datenblatt-PDF

DMN2009LSS-13 Datenblatt PDF
Diodes
5 Seiten, 149 KB
DMN2009LSS-13 Anderes Datenblatt
Diodes
183 Seiten, 647 KB
DMN2009LSS-13 Anwendungshinweis
Diodes
6 Seiten, 228 KB
DMN2009LSS-13 Notizdatei
Diodes
7 Seiten, 189 KB

DMN2009 Datenblatt-PDF

DMN2009LSS-13
Datenblatt PDF
Diodes
Trans MOSFET N-CH 20V 12A 8Pin SOP T/R
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