herunterladen
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
1 of 7
www.diodes.com
July 2011
© Diodes Incorporated
DMN3730U
A
Product Line o
f
Diodes Incorporated
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
V
(BR)DSS
Max R
DS(on)
I
D
Max (Note 5)
T
A
= 25°C
30V
460mΩ @ V
GS
= 4.5V
0.94A
560mΩ @ V
GS
= 2.5V
0.85A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
• Portable applications
• Power Management Functions
Features and Benefits
• Low V
GS(th),
can be driven directly from a battery
• Low R
DS(on)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2kV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish-Matte Tin.
• Weight: 0.08 grams (approximate)
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN3730U-7 N3U 7 8 3,000
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
N3U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
SOT23
Top View Top View
Pin-Out
Equivalent Circuit
D
G
S
ESD PROTECTED TO 2kV
Source
Gate
Drain
Body
Diode
Gate
Protection
Diode
N3U
YM
Verzeichnis
