Web Analytics
Datasheet
Teiledatenblatt > MOSFET, MOSFET Transistor > Fairchild > FDFMA3N109 Datenblatt-PDF > FDFMA3N109 Anwendungshinweis Seite 1/6

FDFMA3N109 Anwendungshinweis - Fairchild

Aktualisierte Uhrzeit: 2025-04-28 20:24:51 (UTC+8)

FDFMA3N109 Anwendungshinweis

Seite:von 6
PDF herunterladen
Neu laden
herunterladen
Solving thermal management challenges in a minimum space
Electronic equipment needs an efficient means of managing and dispersing
heat as systems continue to shrink in size.
Heat is a killer for electronic systems. As applications get thinner and lighter, this statement has
never been more true, yet space and weight restrictions especially in portable mobile devices
mean that conventional solutions may not be feasible. But it’s not just consumer products such as
smartphones, tablets and cameras that are at risk. Communications infrastructure equipment cram
more and more complex electronics systems into a small space; electric (Eco) and hybrid cars require
long-lasting, lightweight batteries; the advent of the smart factory (Industry 4.0) calls for greater
levels of monitoring and control; solar panels (ironically) need to be able to cope with constant
exposure to the sun; modern medical devices must be able to be worn comfortably.
All these examples require heat to be transferred or dispersed effectively, using a minimum amount
of space. Pyrolytic Graphite Sheet (PGS) is a new, ultra-light graphite interface film material,
developed by Panasonic, which has a thermal conductivity up to five times greater than copper. It is
pliable enough to be cut and folded into complex three dimensional shapes then simply stuck onto
the heat source to diffuse the heat or provide a path for heat to flow to a cold wall.
What is PGS?
Pyrolytic Highly Oriented Graphite Sheet is made of graphite with a structure that is close to a single
crystal. It is produced from polymeric film using a heat de-composition process. The hexagonal
crystal structure of graphite is arranged uniformly in a horizontal 2D structure see figure 1 (PPT slide
6).
Fig 1.
Verzeichnis

FDFMA3N109 Datenblatt-PDF

FDFMA3N109 Datenblatt PDF
Fairchild
8 Seiten, 469 KB
FDFMA3N109 Anderes Datenblatt
Fairchild
9 Seiten, 263 KB
FDFMA3N109 Anwendungshinweis
Fairchild
6 Seiten, 1946 KB

FDFMA3 Datenblatt-PDF

FDFMA3N109
Datenblatt PDF
Fairchild
FAIRCHILD SEMICONDUCTOR FDFMA3N109 MOSFET Transistor, N Channel + Schottky, 2.9A, 30V, 0.075Ω, 4.5V, 1V
FDFMA3N109
Anderes Datenblatt
ON Semiconductor
MOSFET Transistor, N Channel, 2.9A, 30V, 0.075Ω, 1V, 1V
FDFMA3P029Z
Datenblatt PDF
Fairchild
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3.3A, 87mOhms
FDFMA3P029Z
Anderes Datenblatt
ON Semiconductor
MOSFET P CH 30V 3.3A MICRO 2X2
Datenblatt-PDF-Suche
Suche
100 Millionen Datenblatt-PDF, aktualisieren Sie mehr als 5.000 PDF-Dateien pro Tag.
Kontakt online
Bonnie - AiPCBA Sales Manager Online, vor 5 Minuten
Ihre E-Mail *
Nachricht *
Senden