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IDW30C65D1
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IDW30C65D1 Anwendungshinweis - Infineon

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IDW30C65D1 Anwendungshinweis

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1 Revision 2.0, 2014-07-17
About this document
Scope and purpose
This document introduces the Rapid Diodes, high voltage hyperfast silicon diodes from Infineon. Based on
ultra-thin wafer technology, two families of Rapid Diodes are released to cover different target application
requirements. This application note is designed to show how the Rapid Diode improves existing system
solutions in terms of system efficiency.
Intended audience
Design engineers who want to improve their system for reliability and efficiency
Table of Contents
1 Description of Technology and Product Family ............................................................... 2
1.1 V
F
- Q
rr
Rapid Diode Trade-off .............................................................................................................. 2
1.2 Relative Variation of Switching Parameters as a Function of Temperature ..................................... 3
2 Application of Rapid Diodes ......................................................................................... 4
2.1 Rapid 1 Diode Static and Dynamic Performance ............................................................................... 5
2.2 Maximum Power Dissipation .............................................................................................................. 6
2.3 Rapid 2 Diode PFC Efficiency Tests ..................................................................................................... 7
2.3.1 Diode Reverse Recovery and PFC Efficiency Result ..................................................................... 7
2.3.2 Rapid 2 Diodes Electrical Parameter Stability ............................................................................. 8
3 Portfolio .................................................................................................................... 9
4 Summary ................................................................................................................. 10
5 References ............................................................................................................... 11
6 Revision History ........................................................................................................ 12
650V Rapid Diode for Industrial
Applications
Application Note
Verzeichnis

IDW30C65D1 Datenblatt-PDF

IDW30C65D1 Datenblatt PDF
Infineon
11 Seiten, 1622 KB
IDW30C65D1 Benutzerreferenzhandbuch
Infineon
48 Seiten, 7466 KB
IDW30C65D1 Anderes Datenblatt
Infineon
4 Seiten, 449 KB
IDW30C65D1 Anwendungshinweis
Infineon
13 Seiten, 660 KB

IDW30C65 Datenblatt-PDF

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Rapid 650V 30A 1,6V TO247-3 **
IDW30C65D2XKSA1
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Diode Switching 650V 30A 3Pin TO-247 Tube
IDW30C65D1XKSA1
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Diode Switching 650V 30A 3Pin TO-247 Tube
IDW30C65D1
Datenblatt PDF
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Rapid 1 and Rapid 2 power silicon diodes fill the gap between the SiC diodes and emitter-controlled diodes and now come in common cathode configuration with up to 80A/650V, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.
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