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HEXFET
®
Power MOSFET
PD - 9.1246D
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7404
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
DG
S
A
D
S
S
V
DSS
= -20V
R
DS(on)
= 0.040Ω
Parameter Max. Units
I
D
@ T
A
= 25°C 10 Sec. Pulsed Drain Current, V
GS
@ -4.5V -7.7
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -6.7
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V -5.4
I
DM
Pulsed Drain Current -27
P
D
@T
A
= 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
A
11/13/06
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 50
°C/W
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