herunterladen
Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -10V -10
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ - 10V -7.1
I
DM
Pulsed Drain Current -45
P
D
@T
A
= 25°C Power Dissipation 2.5
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 370 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
IRF7416
PD - 9.1356E
V
DSS
= -30V
R
DS(on)
= 0.02Ω
HEXFET
®
Power MOSFET
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
DG
S
A
D
S
S
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
W
A
12/21/05
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 50
°C/W
Verzeichnis
