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IRFP250MPbF
HEXFET
®
Power MOSFET
03/01/10
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 30
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 21 A
I
DM
Pulsed Drain Current 120
P
D
@T
C
= 25°C Power Dissipation 214 W
Linear Derating Factor 1.4 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 315 mJ
I
AR
Avalanche Current 30 A
E
AR
Repetitive Avalanche Energy 21 mJ
dv/dt Peak Diode Recovery dv/dt 8.6 V/ns
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.7
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient ––– 40
Thermal Resistance
www.irf.com 1
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
V
DSS
= 200V
R
DS(on)
= 0.075Ω
I
D
= 30A
S
D
G
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
TO-247AC
PD - 96292
l Lead-Free
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