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IRS2005STRPBF Anwendungshinweis - Infineon

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IRS2005STRPBF Anwendungshinweis

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1
AN-978 RevD
Application Note AN-978
HV Floating MOS-Gate Driver ICs
(HEXFET is a trademark of International Rectifier)
Table of Contents
Page
Gate drive requirement of high-side devices............................................................... 2
A typical block diagram ............................................................................................... 3
How to select the bootstrap components.................................................................... 5
How to calculate the power dissipation in an MGD..................................................... 6
How to deal with negative transients on the V
s
pin ..................................................... 9
Layout and other general guidelines ........................................................................... 11
How to boost gate drive current to drive modules....................................................... 14
How to provide a continuous gate drive ...................................................................... 17
How to generate a negative gate bias......................................................................... 19
How to drive a buck converter..................................................................................... 22
Dual forward converter and switched reluctance motor drives ................................... 24
Full bridge with current mode control .......................................................................... 24
Brushless and induction motor drives ......................................................................... 26
Push-pull ..................................................................................................................... 27
High-side P-channel .................................................................................................... 27
Troubleshooting guidelines ......................................................................................... 28
Verzeichnis

IRS2005STRPBF Datenblatt-PDF

IRS2005STRPBF Datenblatt PDF
Infineon
19 Seiten, 1859 KB
IRS2005STRPBF Benutzerreferenzhandbuch
Infineon
48 Seiten, 7466 KB
IRS2005STRPBF Anderes Datenblatt
Infineon
73 Seiten, 3004 KB
IRS2005STRPBF Anwendungshinweis
Infineon
30 Seiten, 426 KB

IRS2005 Datenblatt-PDF

IRS2005STRPBF
Datenblatt PDF
Infineon
200V High and Low Side Driver IC with typical 0.29A source and 0.6A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead MLPQ 4x4.
IRS2005MTRPBF
Datenblatt PDF
Infineon
Driver 2Out High and Low Side Non-Inv 14Pin PQFP T/R
IRS2005SPBF
Datenblatt PDF
Infineon
200V High and Low Side Driver IC with typical 0.29A source and 0.6A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead MLPQ 4x4.
IRS2005S
Datenblatt PDF
Infineon
200V High and Low Side Driver IC with typical 0.29A source and 0.6A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead MLPQ 4x4.
IRS2005M
Datenblatt PDF
Infineon
200V High and Low Side Driver IC with typical 0.29A source and 0.6A sink currents in MLPQ 4x4 14L package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.
IRS2005STRPBF
Datenblatt PDF
International Rectifier
Gate Drivers High and Low Side Driver
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