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IRS2111STRPBF
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IRS2111STRPBF Anwendungshinweis - Infineon

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IRS2111STRPBF Anwendungshinweis

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1
AN-978 RevD
Application Note AN-978
HV Floating MOS-Gate Driver ICs
(HEXFET is a trademark of International Rectifier)
Table of Contents
Page
Gate drive requirement of high-side devices............................................................... 2
A typical block diagram ............................................................................................... 3
How to select the bootstrap components.................................................................... 5
How to calculate the power dissipation in an MGD..................................................... 6
How to deal with negative transients on the V
s
pin ..................................................... 9
Layout and other general guidelines ........................................................................... 11
How to boost gate drive current to drive modules....................................................... 14
How to provide a continuous gate drive ...................................................................... 17
How to generate a negative gate bias......................................................................... 19
How to drive a buck converter..................................................................................... 22
Dual forward converter and switched reluctance motor drives ................................... 24
Full bridge with current mode control .......................................................................... 24
Brushless and induction motor drives ......................................................................... 26
Push-pull ..................................................................................................................... 27
High-side P-channel .................................................................................................... 27
Troubleshooting guidelines ......................................................................................... 28
Verzeichnis

IRS2111STRPBF Datenblatt-PDF

IRS2111STRPBF Datenblatt PDF
Infineon
16 Seiten, 728 KB
IRS2111STRPBF Benutzerreferenzhandbuch
Infineon
48 Seiten, 7466 KB
IRS2111STRPBF Anderes Datenblatt
Infineon
73 Seiten, 3004 KB
IRS2111STRPBF Anwendungshinweis
Infineon
30 Seiten, 426 KB

IRS2111 Datenblatt-PDF

IRS2111
Datenblatt PDF
International Rectifier
Half Bridge Driver, Fixed 650ns Deadtime in a 8-Lead package
IRS2111
Datenblatt PDF
Infineon
600V Half Bridge Driver IC with typical 0.29A source and 0.6A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.
IRS2111SPBF
Datenblatt PDF
Infineon
MOSFET DRVR 600V 0.6A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC Tube
IRS2111PBF
Datenblatt PDF
Infineon
Driver 600V 0.6A 2Out High and Low Side Half Brdg Inv/Non-Inv 8Pin PDIP Tube
IRS2111STRPBF
Datenblatt PDF
Infineon
MOSFET DRVR 600V 0.6A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/R
IRS2111PBF
Datenblatt PDF
International Rectifier
MOSFET DRVR 600V 0.6A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin PDIP Tube
IRS2111SPBF
Datenblatt PDF
International Rectifier
Driver 600V 0.6A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC Tube
IRS2111STRPBF
Datenblatt PDF
International Rectifier
Driver 600V 0.6A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/R
IRS2111S
Datenblatt PDF
Infineon
600V Half Bridge Driver IC with typical 0.29A source and 0.6A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.
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