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IRS23364DSTRPBF
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IRS23364DSTRPBF Anwendungshinweis - Infineon

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IRS23364DSTRPBF Anwendungshinweis

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1
AN-978 RevD
Application Note AN-978
HV Floating MOS-Gate Driver ICs
(HEXFET is a trademark of International Rectifier)
Table of Contents
Page
Gate drive requirement of high-side devices............................................................... 2
A typical block diagram ............................................................................................... 3
How to select the bootstrap components.................................................................... 5
How to calculate the power dissipation in an MGD..................................................... 6
How to deal with negative transients on the V
s
pin ..................................................... 9
Layout and other general guidelines ........................................................................... 11
How to boost gate drive current to drive modules....................................................... 14
How to provide a continuous gate drive ...................................................................... 17
How to generate a negative gate bias......................................................................... 19
How to drive a buck converter..................................................................................... 22
Dual forward converter and switched reluctance motor drives ................................... 24
Full bridge with current mode control .......................................................................... 24
Brushless and induction motor drives ......................................................................... 26
Push-pull ..................................................................................................................... 27
High-side P-channel .................................................................................................... 27
Troubleshooting guidelines ......................................................................................... 28
Verzeichnis

IRS23364DSTRPBF Datenblatt-PDF

IRS23364DSTRPBF Datenblatt PDF
Infineon
49 Seiten, 992 KB
IRS23364DSTRPBF Benutzerreferenzhandbuch
Infineon
48 Seiten, 7466 KB
IRS23364DSTRPBF Anderes Datenblatt
Infineon
73 Seiten, 3004 KB
IRS23364DSTRPBF Anwendungshinweis
Infineon
30 Seiten, 426 KB
IRS23364DSTRPBF Verpackung
Infineon
5 Seiten, 329 KB

IRS23364 Datenblatt-PDF

IRS23364DJPBF
Datenblatt PDF
Infineon
MOSFET DRVR 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Non-Inv 32Pin PLCC Tube
IRS23364DSPBF
Datenblatt PDF
Infineon
MOSFET DRVR 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Non-Inv 28Pin SOIC W Tube
IRS23364DSTRPBF
Datenblatt PDF
Infineon
MOSFET DRVR 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Non-Inv 28Pin SOIC W T/R
IRS23364DJTRPBF
Datenblatt PDF
Infineon
MOSFET DRVR 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Non-Inv 32Pin PLCC T/R
IRS23364DSPBF
Datenblatt PDF
International Rectifier
Driver 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Non-Inv 28Pin SOIC W Tube
IRS23364DJPBF
Datenblatt PDF
International Rectifier
Driver 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Non-Inv 32Pin PLCC Tube
IRS23364DSTRPBF
Datenblatt PDF
International Rectifier
Driver 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Non-Inv 28Pin SOIC W T/R
IRS23364DJTRPBF
Datenblatt PDF
International Rectifier
Driver 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Non-Inv 32Pin PLCC T/R
IRS23364DJ
Datenblatt PDF
Infineon
600V Three Phase Driver IC with typical 0.2A source and 0.35A sink currents in 44 Lead PLCC package for IGBTs and MOSFETs. Also available in 28 Lead SOICWB.
IRS23364DS
Datenblatt PDF
Infineon
600V Three Phase Driver IC with typical 0.2A source and 0.35A sink currents in 28 Lead SOICWB package for IGBTs and MOSFETs. Also available in 44 Lead PLCC.
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