© 2004 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 300 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 300 V
V
GS
Transient ±20 V
V
GSM
Continuous ±30 V
I
D25
T
C
= 25°C88A
I
D(RMS)
External lead current limit 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
220 A
I
AR
T
C
= 25°C60A
E
AR
T
C
= 25°C60mJ
E
AS
T
C
= 25°C 2.0 J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 10 V/ns
T
J
≤ 150°C, R
G
= 4 Ω
P
D
T
C
= 25°C 600 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-264 10 g
G = Gate D = Drain
S = Source TAB = Drain
DS99216(12/04)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS
= 0 V, I
D
= 250 µA 300 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 2.5 5.0 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
25 µA
V
GS
= 0 V T
J
= 125°C 250 µA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
40 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHT
TM
HiPerFET
Power MOSFET
IXFH 88N30P V
DSS
= 300 V
IXFK 88N30P I
D25
= 88 A
R
DS(on)
= 40 m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 200 ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
TO-247 (IXFH)
D (TAB)
S
G
D
(TAB)
TO-264 (IXFK)
Preliminary Data Sheet
