© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 10
1 Publication Order Number:
M1MA151WAT1/D
M1MA151WAT1,
M1MA152WAT1
Preferred Device
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC−59 package which is designed for low
power surface mount applications.
Features
• Fast t
rr
, < 10 ns
• Low C
D
, < 15 pF
• Pb−Free Packages are Available
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Reverse Voltage
M1MA151WAT1
M1MA152WAT1
V
R
40
80
Vdc
Peak Reverse Voltage
M1MA151WAT1
M1MA152WAT1
V
RM
40
80
Vdc
Forward Current
Single
Dual
I
F
100
150
mAdc
Peak Forward Current
Single
Dual
I
FM
225
340
mAdc
Peak Forward Surge Current
Single
Dual
I
FSM
(Note 1)
500
750
mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation P
D
200 mW
Junction Temperature T
J
150 °C
Storage Temperature T
stg
−55 to + 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 SEC
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
SC−59
CASE 318D
MARKING DIAGRAM
3 ANODE
12
CATHODE
Device Package Shipping
†
ORDERING INFORMATION
M1MA151WAT1 SC−59 3000/Tape & Reel
M1MA151WAT1G SC−59
(Pb−Free)
3000/Tape & Reel
M1MA152WAT1 SC−59 3000/Tape & Reel
M1MA152WAT1G SC−59
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Mx M G
G
Mx = Device Code
x = N for 151
O for 152
M = Date Code*
G =Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
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