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MRF8S9202NR3 MRF8S9202GNR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 920 to 960
MHz. Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
! Typical Single--Carrier W--CDMA Performance: V
DD
=28Volts,I
DQ
=
1300 mA, P
out
= 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth =
3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
G
ps
(dB)
"
D
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz 19.0 36.3 6.3 --38.2
940 MHz 19.1 37.2 6.2 --38.0
960 MHz 18.9 37.3 6.1 --37.1
! Capable of Handling 7:1 VSWR, @ 32 Vdc, 920 MHz, 290 Watts CW Output
Power (3 dB Input Overdrive from Rated P
out
). Designed for
Enhanced Ruggedness.
! Typical P
out
@ 1 dB Compression Point ≃ 200 Watts CW
Features
! 100% PAR Tested for Guaranteed Output Power Capability
! Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
! Internally Matched for Ease of Use
! Integrated ESD Protection
! Greater Negative Gate--Source Voltage Range for Improved Class C Operation
! Designed for Digital Predistortion Error Correction Systems
! Optimized for Doherty Applications
! 225#C Capable Plastic Package
! In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +70 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
--65 to +150 #C
Case Operating Temperature T
C
150 #C
Operating Junction Temperature
(1,2)
T
J
225 #C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80#C, 58 W CW, 28 Vdc, I
DQ
= 1300 mA, 920 MHz
Case Temperature 90#C, 200 W CW, 28 Vdc, I
DQ
= 1300 mA, 920 MHz
R
$
JC
0.31
0.27
#C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor
Technical Data
Document Number: MRF8S9202N
Rev. 1, 2/2012
920--960 MHz, 58 W AVG., 28 V
SINGLE W--CDMA
LATERAL N-- CHANNEL
RF POWER MOSFETs
MRF8S9202NR3
MRF8S9202GNR3
CASE 2021--03, STYLE 1
O M -- 7 8 0 -- 2
PLASTIC
MRF8S9202NR3
CASE 2267--01
O M -- 7 8 0 -- 2 G U L L
PLASTIC
MRF8S9202GNR3
% Freescale Semiconductor, Inc., 2010, 2012.
A
ll rights reserved.
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