Web Analytics
Datasheet
Teiledatenblatt > Motorola > MBD330DWT1 Datenblatt-PDF > MBD330DWT1 Anwendungshinweis Seite 1/5
Aktualisierte Uhrzeit: 2025-06-17 02:50:45 (UTC+8)

MBD330DWT1 Anwendungshinweis

Seite:von 5
PDF herunterladen
Neu laden
herunterladen
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 8
1 Publication Order Number:
MBD110DWT1/D
MBD110DWT1G,
MBD330DWT1G
Dual Schottky Barrier
Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT363 package is a
solution which simplifies circuit design, reduces device count, and reduces
board space by putting two discrete devices in one small sixleaded
package. The SOT363 is ideal for lowpower surface mount applications
where board space is at a premium, such as portable products.
Surface Mount Comparisons:
SOT363 SOT23
Area (mm
2
) 4.6 7.6
Max Package P
D
(mW) 120 225
Device Count 2 1
Space Savings:
Package 1 x SOT23 2 x SOT23
SOT363 40% 70%
The MBD110DW and MBD330DW devices are spinoffs of our
popular MMBD101LT1 and MMBD301LT1 SOT23 devices. They are
designed for highefficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage MBD110DWT1G
MBD330DWT1G
V
R
7.0
30
V
Forward Current (DC) MBD330DWT1G I
F
200 Max mA
Forward Power Dissipation T
A
= 25°C P
F
120 mW
Junction Temperature T
J
55 to +125 °C
Storage Temperature Range T
stg
55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
SC88 / SOT363
CASE 419B
STYLE 6
MARKING DIAGRAM
Anode 1 6 Cathode
Cathode 3 4 Anode
N/C 2 5 N/C
xx M G
G
xx = Device Code
Refer to Ordering Table,
page 2
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
1
6
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
Verzeichnis

MBD330DWT1 Datenblatt-PDF

MBD330DWT1 Datenblatt PDF
Motorola
8 Seiten, 127 KB
MBD330DWT1 Anwendungshinweis
Motorola
5 Seiten, 104 KB

MBD330 Datenblatt-PDF

MBD330DWT1G
Datenblatt PDF
ON Semiconductor
ON Semi MBD330DWT1G, Dual SMT Schottky Diode, Isolated, 30V 200mA, 6Pin SC-88
MBD330DWT1
Anderes Datenblatt
ON Semiconductor
30V Schottky Diode, dual, isolated, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
MBD330DW
Diagramme zeichnen
ON Semiconductor
SC-88-6/SC-70-6/SOT-363-6 30V 0.2A 0.45V
MBD330DWT1
Datenblatt PDF
Motorola
Dual Schottky Barrier Diodes
MBD330DWT1
Datenblatt PDF
Leshan Radio
Diode
Datenblatt-PDF-Suche
Suche
100 Millionen Datenblatt-PDF, aktualisieren Sie mehr als 5.000 PDF-Dateien pro Tag.
Kontakt online
Bonnie - AiPCBA Sales Manager Online, vor 5 Minuten
Ihre E-Mail *
Nachricht *
Senden