© Semiconductor Components Industries, LLC, 1996
October, 2016 − Rev. 11
1 Publication Order Number:
MGSF1N03LT1/D
MGSF1N03L, MVGSF1N03L
Power MOSFET
30 V, 2.1 A, Single N−Channel, SOT−23
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
• Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• MV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JL
Steady
State
T
A
= 25°C
I
D
2.1
A
T
A
= 85°C 1.5
Power Dissipation
R
q
JL
Steady
State
T
A
= 25°C P
D
0.69 W
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
1.6
A
T
A
= 85°C 1.2
Power Dissipation
(Note 1)
T
A
= 25°C P
D
0.42 W
Pulsed Drain Current
t
p
=10 ms
I
DM
6.0 A
ESD Capability
(Note 3)
C = 100 pF,
RS = 1500 W
ESD 125 V
Operating Junction and Storage Temperature T
J
, T
STG
−55 to 150 °C
Source Current (Body Diode) I
S
2.1 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 sec)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Foot − Steady State
R
q
JL
180
°C/W
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
300
Junction−to−Ambient − t < 10 s (Note 1)
R
q
JA
250
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
400
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 650 mm
2
, 1 oz. Cu pad size.
2. Surface−mounted on FR4 board using 50 mm
2
, 1 oz. Cu pad size.
3. ESD Rating Information: HBM Class 0.
G
D
S
Device Package Shipping
†
ORDERING INFORMATION
30 V
125 mW @ 4.5 V
80 mW @ 10 V
R
DS(on)
TYP
2.1 A
I
D
MAXV
(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
N3 = Specific Device Code
M = Date Code*
G = Pb−Free Package
3
1
Drain
1
Gate
2
Source
N−Channel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MGSF1N03LT3G SOT−23
(Pb−Free)
N3 M G
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MGSF1N03LT1G SOT−23
Pb−Free
3000 / Tape &
Reel
10000 / Tape &
Reel
MVGSF1N03LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
www.onsemi.com
Verzeichnis
- ・ Konfiguration des Pinbelegungsdiagramms on Seite 1
- ・ Abmessungen des Paketumrisses on Seite 6
- ・ Paket-Footprint-Pad-Layout on Seite 6
- ・ Teilenummerierungssystem on Seite 1 Seite 6
- ・ Markierungsinformationen on Seite 1 Seite 6
- ・ Typisches Anwendungsschaltbild on Seite 1
- ・ Anwendungsbereich on Seite 1
- ・ Elektrische Spezifikation on Seite 2 Seite 3 Seite 4 Seite 5
- ・ Teilenummernliste on Seite 1
