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© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6
1 Publication Order Number:
MJ15001/D
MJ15001 (NPN),
MJ15002 (PNP)
Complementary Silicon
Power Transistors
The MJ15001 and MJ15002 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area
• For Low Distortion Complementary Designs
• High DC Current Gain
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
140 Vdc
Collector−Base Voltage V
CBO
140 Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector Current − Continuous I
C
15 Adc
Base Current − Continuous I
B
5 Adc
Emitter Current − Continuous I
E
20 Adc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
200
1.14
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.875 °C/W
Maximum Lead Temperature for Soldering
Purposes 1/16″ from Case for v 10 secs
T
L
265 °C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
TO−204AA
(Pb−Free)
MJ15002G
MJ15001G TO−204AA
(Pb−Free)
100 Units/Tray
100 Units/Tray
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1500x = Device Code
x = 1 or 2
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
MJ1500xG
AYYWW
MEX
1
2
3
SCHEMATIC
1
BASE
EMITTER 2
CASE 3
1
BASE
EMITTER 2
CASE 3
PNP
NPN
Verzeichnis
