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MJD32CT4G Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 14
1 Publication Order Number:
MJD31/D
MJD31 (NPN), MJD32 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
V
CEO
40
100
Vdc
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
V
CB
40
100
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
3.0 Adc
Collector Current − Peak I
CM
5.0 Adc
Base Current I
B
1.0 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
15
0.12
W
W/°C
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
1.56
0.012
W
W/°C
Operating and Storage Junction Temperature
Range
T
J
, T
stg
65 to
+150
°C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
8.3 °C/W
Thermal Resistance, Junction−to−Ambient*
R
q
JA
80 °C/W
Lead Temperature for Soldering Purposes T
L
260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
IPAK
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAMS
A = Site Code
Y = Year
WW = Work Week
xx = 1, 1C, 2, or 2C
G = Pb−Free Package
AYWW
J3xxG
YWW
J3xxG
www.onsemi.com
DPAK IPAK
4
1
2
3
4
1
2
3
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
COMPLEMENTARY
Verzeichnis

MJD32CT4G Datenblatt-PDF

MJD32CT4G Datenblatt PDF
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MJD32CT4G Anderes Datenblatt
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MJD32CT4G Anwendungshinweis
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10 Seiten, 96 KB
MJD32CT4G Notizdatei
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5 Seiten, 45 KB
MJD32CT4G Andere Referenzen
ON Semiconductor
1 Seiten, 146 KB

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