Web Analytics
Datasheet
Teiledatenblatt > BJT Transistor, BJT > ST Microelectronics > MJD340T4 Datenblatt-PDF > MJD340T4 Anwendungshinweis Seite 1/6
MJD340T4
€ 0.71
Preis von AiPCBA

MJD340T4 Anwendungshinweis - ST Microelectronics

Aktualisierte Uhrzeit: 2025-06-14 12:36:11 (UTC+8)

MJD340T4 Anwendungshinweis

Seite:von 6
PDF herunterladen
Neu laden
herunterladen
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 11
1 Publication Order Number:
MJD340/D
MJD340,
NJVMJD340T4G(NPN),
MJD350,
NJVMJD350T4G(PNP)
High Voltage Power
Transistors
DPAK for Surface Mount Applications
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Electrically Similar to Popular MJE340 and MJE350
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage V
CEO
300 Vdc
Collector−Base Voltage V
CB
300 Vdc
Emitter−Base Voltage V
EB
3 Vdc
Collector Current − Continuous I
C
0.5 Adc
Collector Current − Peak I
CM
0.75 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
15
0.12
W
W/°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
1.56
0.012
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS, 15 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
J3x0 = Device Code
x= 4 or 5
G = Pb−Free Package
AYWW
J3x0G
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
1
2
3
4
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
BASE
3
EMITTER
COLLECTOR
2, 4
Verzeichnis

MJD340T4 Datenblatt-PDF

MJD340T4 Datenblatt PDF
ST Microelectronics
5 Seiten, 504 KB
MJD340T4 Anderes Datenblatt
ST Microelectronics
1 Seiten, 436 KB
MJD340T4 Anwendungshinweis
ST Microelectronics
6 Seiten, 138 KB

MJD340 Datenblatt-PDF

MJD340
Datenblatt PDF
Fairchild
Trans GP BJT NPN 300V 0.5A 1560mW 3Pin(2+Tab) DPAK Rail
MJD340
Datenblatt PDF
ON Semiconductor
DPAK-3 NPN 300V 0.5A
MJD340
Datenblatt PDF
ST Microelectronics
Trans GP BJT NPN 300V 0.5A 3Pin (2+Tab) DPAK
MJD340
Anwendungshinweis
Freescale
TRANS NPN 300V 0.5A DPAK
MJD340
Datenblatt PDF
Motorola
SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15W
MJD340
Datenblatt PDF
Taitron
Power Bipolar Transistor,
MJD340
Datenblatt PDF
Diodes
HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR
MJD340G
Datenblatt PDF
ON Semiconductor
DPAK NPN 300V 0.5A
MJD340T4G
Datenblatt PDF
ON Semiconductor
DPAK NPN 300V 0.5A
MJD340T4
Datenblatt PDF
ST Microelectronics
Trans GP BJT NPN 300V 0.5A 15000mW 3Pin(2+Tab) DPAK T/R
Datenblatt-PDF-Suche
Suche
100 Millionen Datenblatt-PDF, aktualisieren Sie mehr als 5.000 PDF-Dateien pro Tag.
Dokumentation beziehen: MJD340 Datenblatt PDF
Kontakt online
Bonnie - AiPCBA Sales Manager Online, vor 5 Minuten
Ihre E-Mail *
Nachricht *
Senden