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MJD42C1G Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 12
1 Publication Order Number:
MJD41C/D
MJD41C(NPN),
MJD42C(PNP)
Complementary Power
Transistors
DPAK for Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Electrically Similar to Popular TIP41 and TIP42 Series
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage V
CEO
100 Vdc
Collector−Base Voltage V
CB
100 Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current − Continuous I
C
6 Adc
Collector Current − Peak I
CM
10 Adc
Base Current I
B
2 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
1.75
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
6 AMPERES
100 VOLTS, 20 WATTS
IPAK
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
J4xC = Device Code
x = 1 or 2
G = Pb−Free Package
AYWW
J4xCG
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
AYWW
J4xCG
http://onsemi.com
DPAK IPAK
COMPLEMENTARY
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
2
3
4
1
2
3
4
Verzeichnis

MJD42C1G Datenblatt-PDF

MJD42C1G Datenblatt PDF
ON Semiconductor
7 Seiten, 85 KB
MJD42C1G Anderes Datenblatt
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MJD42C1G Anwendungshinweis
ON Semiconductor
7 Seiten, 132 KB
MJD42C1G Notizdatei
ON Semiconductor
5 Seiten, 45 KB

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