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MJE253G Anwendungshinweis - ON Semiconductor

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MJE253G Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 14
1 Publication Order Number:
MJE243/D
MJE243 (NPN),
MJE253(PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
lowcurrent, highspeed switching applications.
Features
High CollectorEmitter Sustaining Voltage
High DC Current Gain
Low CollectorEmitter Saturation Voltage
High Current Gain Bandwidth Product
Annular Construction for Low Leakages
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
100 Vdc
CollectorBase Voltage V
CB
100 Vdc
EmitterBase Voltage V
EB
7.0 Vdc
Collector Current Continuous I
C
4.0 Adc
Collector Current Peak I
CM
8.0 Adc
Base Current I
B
10 Adc
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
15
120
W
mW/_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
1.5
12
W
mW/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase
q
JC
8.34
_C/W
Thermal Resistance,
JunctiontoAmbient
q
JA
83.4
_C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
http://onsemi.com
MJE243G
TO225
(PbFree)
500 Units/Box
MARKING DIAGRAM
YWW
JE2x3G
Y = Year
WW = Work Week
JE2x3 = Device Code
x = 4 or 5
G=PbFree Package
MJE253G
TO225
(PbFree)
500 Units/Box
TO225
CASE 7709
STYLE 1
2
1
3
4
SCHEMATIC
3
BASE
EMITTER 1
COLLECTOR 2, 4
3
BASE
EMITTER 1
COLLECTOR 2, 4
PNP
NPN
Verzeichnis

MJE253G Datenblatt-PDF

MJE253G Datenblatt PDF
ON Semiconductor
6 Seiten, 92 KB
MJE253G Anderes Datenblatt
ON Semiconductor
8 Seiten, 240 KB
MJE253G Diagramme zeichnen
ON Semiconductor
2 Seiten, 32 KB
MJE253G Anwendungshinweis
ON Semiconductor
6 Seiten, 132 KB
MJE253G Notizdatei
ON Semiconductor
11 Seiten, 1880 KB
MJE253G Andere Referenzen
ON Semiconductor
1 Seiten, 146 KB

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