herunterladen
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE350
..PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 300 V
V
CEO
Collector-Emitter Voltage - 300 V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current - 500 mA
P
C
Collector Dissipation (T
C
=25°C) 20 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= - 1mA, I
B
= 0 -300 V
I
CBO
Collector Cut-off Current V
CB
= - 300V, I
E
= 0 -100 µA
I
EBO
Emitter Cut-off Current V
BE
= - 3V, I
C
= 0 -100 µA
h
FE
DC Current Gain V
CE
= - 10V, I
C
= - 50mA 30 240
MJE350
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE340
1
TO-126
1. Emitter 2.Collector 3.Base
Verzeichnis
