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MJE802G Anwendungshinweis - ON Semiconductor

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MJE802G Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 12
1 Publication Order Number:
MJE700/D
MJE700G, MJE702G,
MJE703G (PNP), MJE800G,
MJE802G, MJE803G (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
High DC Current Gain − h
FE
= 2000 (Typ) @ I
C
= 2.0 Adc
Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
Choice of Packages − MJE700 and MJE800 Series
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
V
CEO
60
80
Vdc
Collector−Base Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
V
CB
60
80
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current I
C
4.0 Adc
Base Current I
B
0.1 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
40
0.32
W
mW/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.12
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
83.3
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
COMPLEMENTARY SILICON
40 WATT
http://onsemi.com
MARKING DIAGRAM
Y = Year
WW = Work Week
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
JEx0yG
COLLECTOR 2, 4
BASE
3
EMITTER 1
COLLECTOR 2, 4
BASE
3
EMITTER 1
NPN PNP
MJE800 MJE700
MJE802 MJE702
MJE803 MJE703
Verzeichnis

MJE802G Datenblatt-PDF

MJE802G Datenblatt PDF
ON Semiconductor
4 Seiten, 105 KB
MJE802G Anderes Datenblatt
ON Semiconductor
7 Seiten, 379 KB
MJE802G Diagramme zeichnen
ON Semiconductor
2 Seiten, 32 KB
MJE802G Anwendungshinweis
ON Semiconductor
7 Seiten, 132 KB
MJE802G Notizdatei
ON Semiconductor
2 Seiten, 164 KB
MJE802G Andere Referenzen
ON Semiconductor
1 Seiten, 140 KB

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