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MJL21193G Anwendungshinweis - ON Semiconductor

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MJL21193G Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 7
1 Publication Order Number:
MJL21193/D
MJL21193(PNP),
MJL21194(NPN)
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
250 Vdc
CollectorBase Voltage V
CBO
400 Vdc
EmitterBase Voltage V
EBO
5 Vdc
CollectorEmitter Voltage 1.5 V V
CEX
400 Vdc
Collector Current Continuous I
C
16 Adc
Collector Current Peak (Note 1) I
CM
30 Adc
Base Current Continuous I
B
5 Adc
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
200
1.43
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to
+ 150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
0.7
_C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
x = 3 or 4
A = Assembly Location
YY = Year
WW = Work Week
G = PbFree Package
Device Package Shipping
ORDERING INFORMATION
MJL21193G TO264
(PbFree)
25 Units / Rail
MJL21194G TO264
(PbFree)
25 Units / Rail
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
16 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 200 WATTS
MJL2119x
AYYWWG
TO264
CASE 340G
STYLE 2
MARKING DIAGRAM
1
BASE
2 COLLECTOR
3
EMITTER
1
2
3
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN
Verzeichnis

MJL21193G Datenblatt-PDF

MJL21193G Datenblatt PDF
ON Semiconductor
7 Seiten, 155 KB
MJL21193G Anderes Datenblatt
ON Semiconductor
7 Seiten, 184 KB
MJL21193G Diagramme zeichnen
ON Semiconductor
2 Seiten, 57 KB
MJL21193G Anwendungshinweis
ON Semiconductor
7 Seiten, 121 KB
MJL21193G Notizdatei
ON Semiconductor
2 Seiten, 53 KB
MJL21193G Andere Referenzen
ON Semiconductor
1 Seiten, 146 KB

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