herunterladen
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1 Publication Order Number:
MMBF0202PLT1/D
MMBF0202PLT1
Preferred Device
Power MOSFET
300 mAmps, 20 Volts
P–Channel SOT–23
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and
battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
20 Vdc
Gate–to–Source Voltage – Continuous V
GS
± 20 Vdc
Drain Current
– Continuous @ T
A
= 25°C
– Continuous @ T
A
= 70°C
– Pulsed Drain Current (t
p
≤ 10 µs)
I
D
I
D
I
DM
300
240
750
mAdc
Total Power Dissipation @ T
A
= 25°C
(Note 1.)
P
D
225 mW
Operating and Storage Temperature
Range
T
J
, T
stg
– 55 to
150
°C
Thermal Resistance – Junction–to–Ambient R
θJA
625 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
T
L
260 °C
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3
1
2
Device Package Shipping
ORDERING INFORMATION
MMBF0202PLT1 SOT–23 3000 Tape & Reel
P–Channel
SOT–23
CASE 318
STYLE 21
http://onsemi.com
W
MARKING
DIAGRAM
P3
W = Work Week
PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
300 mAMPS
20 VOLTS
R
DS(on)
= 1.4
Preferred devices are recommended choices for future use
and best overall value.
