Web Analytics
Datasheet
Teiledatenblatt > BJT Transistor, BJT > ON Semiconductor > MMBT589LT1G Datenblatt-PDF > MMBT589LT1G Anwendungshinweis Seite 1/5
MMBT589LT1G
€ 0.33
Preis von AiPCBA

MMBT589LT1G Anwendungshinweis - ON Semiconductor

Aktualisierte Uhrzeit: 2025-05-31 08:39:05 (UTC+8)

MMBT589LT1G Anwendungshinweis

Seite:von 5
PDF herunterladen
Neu laden
herunterladen
Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 6
1 Publication Order Number:
MMBT589LT1/D
MMBT589LT1G,
NSVMMBT589LT1G
High Current Surface Mount
PNP Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
AECQ101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
A
= 25C)
Rating
Symbol Value Unit
CollectorEmitter Voltage V
CEO
30 Vdc
CollectorBase Voltage V
CBO
50 Vdc
EmitterBase Voltage V
EBO
5.0 Vdc
Collector Current Continuous I
C
1.0 Adc
Collector Current Peak I
CM
2.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board,
(Note 1) T
A
= 25C
Derate above 25C
P
D
310
2.5
mW
mW/C
Thermal Resistance
JunctiontoAmbient (Note 1)
R
q
JA
403
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25C
Derate above 25C
P
D
710
5.7
mW
mW/C
Thermal Resistance
JunctiontoAmbient (Note 2)
R
q
JA
176
C/W
Total Device Dissipation (Ref. Figure 8)
(Single Pulse < 10 sec.)
P
Dsingle
575 mW
Junction and Storage Temperature T
J
, T
stg
55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 X 1.0 inch Pad
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 6
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT589LT1G SOT23
(PbFree)
3,000 /
Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
G3 M G
G
G3 = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
30 VOLTS, 2.0 AMPS
PNP TRANSISTORS
COLLECTOR
3
1
BASE
2
EMITTER
NSVMMBT589LT1G SOT23
(PbFree)
3,000 /
Tape & Reel
Verzeichnis

MMBT589LT1G Datenblatt-PDF

MMBT589LT1G Datenblatt PDF
ON Semiconductor
6 Seiten, 119 KB
MMBT589LT1G Anderes Datenblatt
ON Semiconductor
6 Seiten, 145 KB
MMBT589LT1G Anwendungshinweis
ON Semiconductor
5 Seiten, 149 KB
MMBT589LT1G Notizdatei
ON Semiconductor
6 Seiten, 73 KB

MMBT589LT1 Datenblatt-PDF

MMBT589LT1
Datenblatt PDF
ON Semiconductor
SOT-23 PNP 30V 1A
MMBT589LT1
Anwendungshinweis
Motorola
1000mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT589LT1G
Datenblatt PDF
ON Semiconductor
SOT-23 PNP 30V 1A
Datenblatt-PDF-Suche
Suche
100 Millionen Datenblatt-PDF, aktualisieren Sie mehr als 5.000 PDF-Dateien pro Tag.
Kontakt online
Bonnie - AiPCBA Sales Manager Online, vor 5 Minuten
Ihre E-Mail *
Nachricht *
Senden