© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. P1
1 Publication Order Number:
NGTB40N120S3W/D
NGTB40N120S3WG
Product Preview
IGBT - Ultra Field Stop
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
low switching losses. The IGBT is well suited for applications that
require fast switching IGBT with low V
F
diodes, e.g. phase−shifted full
bridge, etc. Incorporated into the device is a free wheeling diode with a
low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology
• T
Jmax
= 175°C
• Low V
F
Reverse Diode
• Optimized for High Speed Switching
• These are Pb−Free Devices
Typical Applications
• Welding
• Uninterruptible Power Inverter Supplies (UPS)
• Motor Control
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
1200 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
160
40
A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
160 A
Diode forward current
@ T
C = 25°C
@ TC = 100°C
I
F
160
40
A
Diode pulsed current, T
pulse
limited
by T
Jmax
I
FM
160 A
Gate−emitter voltage
Transient gate−emitter voltage
(T
pulse
= 5 ms, D < 0.10)
V
GE
±20
±30
V
Power Dissipation
@ T
C = 25°C
@ TC = 100°C
P
D
454
227
W
Operating junction temperature range T
J
−55 to +175 °C
Storage temperature range T
stg
−55 to +175 °C
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
TO−247
CASE 340AL
C
G
40 A, 1200 V
V
CEsat
= 1.7 V
E
off
= 1.1 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB40N120S3WG TO−247
(Pb−Free)
30 Units / Ra
il
www.onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
40N120S3
AYWWG
G
E
C
Verzeichnis
- ・ Abmessungen des Paketumrisses on Seite 11
- ・ Teilenummerierungssystem on Seite 1 Seite 11
- ・ Markierungsinformationen on Seite 1 Seite 11
- ・ Typisches Anwendungsschaltbild on Seite 1
- ・ Technische Daten on Seite 1
- ・ Anwendungsbereich on Seite 1
- ・ Elektrische Spezifikation on Seite 2 Seite 3
- ・ Teilenummernliste on Seite 1
