© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 5
1 Publication Order Number:
NSS60601MZ4/D
NSS60601MZ4
60 V, 6.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V
CE(sat)
) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
• Complementary to NSS60600MZ4
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Collector-Emitter Voltage V
CEO
60 Vdc
Collector-Base Voltage V
CBO
100 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
6.0 A
Collector Current − Peak I
CM
12.0 A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
60 VOLTS, 6.0 AMPS
2.0 WATTS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
50 mW
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
Schematic
C 2, 4
B 1 E 3
PIN ASSIGNMENT
1
60601G
AYW
A = Assembly Location
Y = Year
W = Work Week
60601 = Specific Device Code
G = Pb−Free Package
Top View Pinout
C
CEB
4
123
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
2
3
4
Verzeichnis
- ・ Konfiguration des Pinbelegungsdiagramms on Seite 1
- ・ Abmessungen des Paketumrisses on Seite 6
- ・ Paket-Footprint-Pad-Layout on Seite 6
- ・ Teilenummerierungssystem on Seite 1 Seite 2 Seite 6
- ・ Markierungsinformationen on Seite 1 Seite 6
- ・ Blockdiagramm on Seite 1
- ・ Typisches Anwendungsschaltbild on Seite 1
- ・ Technische Daten on Seite 2
- ・ Anwendungsbereich on Seite 1 Seite 2
- ・ Elektrische Spezifikation on Seite 3
