© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 9
1 Publication Order Number:
NTD3055L104/D
NTD3055L104,
NTDV3055L104
Power MOSFET
12 A, 60 V, Logic Level N−Channel
DPAK/IPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Lower R
DS(on)
• Lower V
DS(on)
• Tighter V
SD
Specification
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
• AEC Q101 Qualified − NTDV3055L104
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage, Continuous
− Non−Repetitive (t
p
v10 ms)
V
GS
V
GS
"15
"20
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
12
10
45
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
48
0.32
2.1
1.5
W
W/°C
W
W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, L = 1.0 mH
I
L(pk)
= 11 A, V
DS
= 60 Vdc)
E
AS
61 mJ
Thermal Resistance, − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
3.13
71.4
100
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2
).
N−Channel
D
S
G
60 V
104 mW
R
DS(on)
TYP
12 A
I
D
MAXV
(BR)DSS
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
1
2
3
4
1
Gate
3
Source
2
Drain
4
Drain
IPAK
CASE 369D
STYLE 2
1
2
3
4
AYWW
55L
104G
AYWw
55L
104G
A = Assembly Location*
55L104 = Device Code
Y = Year
WW = Work Week
G = Pb−Free Package
http://onsemi.com
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
Verzeichnis
- ・ Konfiguration des Pinbelegungsdiagramms on Seite 1
- ・ Abmessungen des Paketumrisses on Seite 8 Seite 9
- ・ Paket-Footprint-Pad-Layout on Seite 8
- ・ Teilenummerierungssystem on Seite 1 Seite 7 Seite 9
- ・ Markierungsinformationen on Seite 1 Seite 9
- ・ Typisches Anwendungsschaltbild on Seite 1
- ・ Technische Daten on Seite 7
- ・ Anwendungsbereich on Seite 1
- ・ Elektrische Spezifikation on Seite 2
- ・ Teilenummernliste on Seite 1
