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NTGS4111PT1G
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NTGS4111PT1G Anwendungshinweis - ON Semiconductor

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NTGS4111PT1G Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 2
1 Publication Order Number:
NTGS4111P/D
NTGS4111P
Power MOSFET
−30 V, −4.7 A, Single P−Channel, TSOP−6
Features
Leading −30 V Trench Process for Low R
DS(on)
Low Profile Package Suitable for Portable Applications
Surface Mount TSOP−6 Package Saves Board Space
Improved Efficiency for Battery Applications
Pb−Free Package is Available
Applications
Battery Management and Switching
Load Switching
Battery Protection
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current (Note 1)
Stead
y
State
T
A
= 25°C
I
D
−3.7
A
T
A
= 85°C −2.7
t 5 s T
A
= 25°C −4.7
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
1.25
W
t 5 s 2.0
Continuous Drain
Current (Note 2)
Stead
y
State
T
A
= 25°C
I
D
−2.6
A
T
A
= 85°C −1.9
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.63 W
Pulsed Drain Current
tp = 10 ms
I
DM
−15 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
−1.7 A
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Rating Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
100
°C/W
Junction−to−Ambient – t 5 s (Note 1)
R
q
JA
62.5
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
200
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.006 in sq).
3
4
1256
Device Package Shipping
ORDERING INFORMATION
NTGS4111PT1 TSOP−6 3000 / Tape & Reel
P−Channel
http://onsemi.com
NTGS4111PT1G TSOP−6
(Pb−Free)
3000 / Tape& Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
TSOP−6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
TG M G
G
TG = Specific Device Code
M
= Date Code*
G = Pb−Free Package
Source
4
Drain
6
Drain
5
3
Gate
1
Drain
2
Drain
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
−30 V
68 mW @ −4.5 V
38 mW @ −10 V
R
DS(on)
TYP
−4.7 A
I
D
MAX
V
(BR)DSS
Verzeichnis

NTGS4111PT1G Datenblatt-PDF

NTGS4111PT1G Datenblatt PDF
ON Semiconductor
2 Seiten, 195 KB
NTGS4111PT1G Anderes Datenblatt
ON Semiconductor
9 Seiten, 488 KB
NTGS4111PT1G Anwendungshinweis
ON Semiconductor
5 Seiten, 68 KB
NTGS4111PT1G Notizdatei
ON Semiconductor
9 Seiten, 552 KB
NTGS4111PT1G Andere Referenzen
ON Semiconductor
1 Seiten, 163 KB

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