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NTGS5120PT1G
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NTGS5120PT1G Anwendungshinweis - ON Semiconductor

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NTGS5120PT1G Anwendungshinweis

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Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 4
1 Publication Order Number:
NTGS3441T1/D
NTGS3441T1
Power MOSFET
1 Amp, 20 Volts
P−Channel TSOP−6
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Miniature TSOP−6 Surface Mount Package
Pb−Free Package is Available
Applications
Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage − Continuous V
GS
8.0 V
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
10 S)
R
JA
P
d
I
D
I
DM
244
0.5
−1.65
−10
°C/W
W
A
A
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
10 S)
R
JA
P
d
I
D
I
DM
128
1.0
−2.35
−14
°C/W
W
A
A
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
10 S)
R
JA
P
d
I
D
I
DM
62.5
2.0
−3.3
−20
°C/W
W
A
A
Operating and Storage Temperature Range T
J
, T
stg
55 to 150 °C
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
T
L
260 °C
1. Minimum FR−4 or G−10PCB, operating to steady state.
2. Mounted onto a 2 square FR−4 board (1 sq. 2 oz. cu. 0.06 thick single
sided), operating to steady state.
3. Mounted onto a 2 square FR−4 board (1 sq. 2 oz. cu. 0.06 thick single
sided), t 5.0 seconds.
1 AMPERE
20 VOLTS
R
DS(on)
= 90 m
3
4
1256
Device Package Shipping
ORDERING INFORMATION
NTGS3441T1 TSOP−6 3000 / Tape & Reel
P−Channel
TSOP−6
CASE 318G
STYLE 1
MARKING
DIAGRAM
PT
W
PT = Device Code
W = Work Week
PIN ASSIGNMENT
321
4
GateDrain
Source
56
Drain
DrainDrain
http://onsemi.com
NTGS3441T1G TSOP−6
(Pb−Free)
3000 / Tape& Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
1
Verzeichnis

NTGS5120PT1G Datenblatt-PDF

NTGS5120PT1G Datenblatt PDF
ON Semiconductor
6 Seiten, 113 KB
NTGS5120PT1G Anderes Datenblatt
ON Semiconductor
26 Seiten, 304 KB
NTGS5120PT1G Anwendungshinweis
ON Semiconductor
6 Seiten, 55 KB
NTGS5120PT1G Notizdatei
ON Semiconductor
9 Seiten, 552 KB

NTGS5120PT1 Datenblatt-PDF

NTGS5120PT1G
Datenblatt PDF
ON Semiconductor
Power MOSFET -60V -2.9A 111mOhm Single P-Channel TSOP-6, TSOP-6, 3000-REEL
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