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NTR1P02LT3G Anwendungshinweis - ON Semiconductor

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NTR1P02LT3G Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2001
October, 2016 − Rev. 14
1 Publication Order Number:
NTR1P02LT1/D
NTR1P02L, NVTR01P02L
Power MOSFET
−20 V, −1.3 A, P−Channel
SOT−23 Package
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are DC−DC converters and power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Miniature SOT−23 Surface Mount Package Saves Board Space
NVTR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free and Halide−Free Packages are Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage − Continuous V
GS
±12 V
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
10 ms)
I
D
I
DM
−1.3
−4.0
A
A
Total Power Dissipation @ T
A
= 25°C P
D
400 mW
Operating and Storage Temperature Range T
J
, T
stg
55 to
150
°C
Thermal Resistance − Junction−to−Ambient
R
q
JA
300 °C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8 from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
D
G
S
Device Package Shipping
ORDERING INFORMATION
P−Channel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NTR1P02LT3G SOT−23
(Pb−Free)
10,000 Tape &
Reel
−20 V
220 mW @ −4.5 V
R
DS(on)
Max
−1.3 A
I
D
MaxV
(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
2
P02 = Specific Device Code
M = Date Code*
G = Pb−Free Package
1
3
NTR1P02LT1G SOT−23
(Pb−Free)
3000 Tape & Ree
l
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
P02 M G
G
1
Gate
2
Source
Drain
3
NVTR01P02LT1G SOT−23
(Pb−Free)
3000 Tape & Ree
l
www.onsemi.com
Verzeichnis

NTR1P02LT3G Datenblatt-PDF

NTR1P02LT3G Anderes Datenblatt
ON Semiconductor
6 Seiten, 186 KB
NTR1P02LT3G Anwendungshinweis
ON Semiconductor
5 Seiten, 90 KB
NTR1P02LT3G Verpackung
ON Semiconductor
6 Seiten, 82 KB
NTR1P02LT3G Notizdatei
ON Semiconductor
5 Seiten, 321 KB

NTR1P02LT3 Datenblatt-PDF

NTR1P02LT3
Anwendungshinweis
ON Semiconductor
Power MOSFET -20V, -1.3A, P-Channel SOT-23 Package
NTR1P02LT3G
Anderes Datenblatt
ON Semiconductor
SOT-23P-CH 20V 1.3A
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