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PZT751T1G Anwendungshinweis - ON Semiconductor

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PZT751T1G Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 8
1 Publication Order Number:
PZT751T1/D
PZT751
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT223 package which is designed for medium power surface
mount applications.
Features
High Current
The SOT223 Package can be soldered using wave or reflow.
SOT223 Package Ensures Level Mounting, Resulting in
Improved Thermal Conduction, and Allows Visual Inspection of
Soldered Joints. The Formed Leads Absorb Thermal Stress During
Soldering, Eliminating the Possibility of Damage to the Die
NPN Complement is PZT651T1
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
CollectorEmitter Voltage V
CEO
60 Vdc
CollectorBase Voltage V
CBO
80 Vdc
EmitterBase Voltage V
EBO
5.0 Vdc
Collector Current I
C
2.0 Adc
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
P
D
0.8
6.4
W
mW/°C
Storage Temperature Range T
stg
65 to 150 °C
Junction Temperature T
J
150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR4 glass epoxy printed circuit board using minimum
recommended footprint.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance from Junctionto
Ambient in Free Air
R
q
JA
156 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT223 PACKAGE
HIGH CURRENT
PNP SILICON TRANSISTOR
SURFACE MOUNT
SOT223
CASE 318E
STYLE 1
COLLECTOR 2, 4
BASE
1
EMITTER 3
Device Package Shipping
ORDERING INFORMATION
PZT751T1G SOT223
(PbFree)
1,000 / Tape & Reel
MARKING DIAGRAM
A = Assembly Location
Y = Year
W = Work Week
G = PbFree Package
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
AYW
ZT751G
G
(Note: Microdot may be in either location)
SPZT751T1G SOT223
(PbFree)
1,000 / Tape & Reel
1
2
3
4
Verzeichnis

PZT751T1G Datenblatt-PDF

PZT751T1G Datenblatt PDF
ON Semiconductor
6 Seiten, 128 KB
PZT751T1G Anderes Datenblatt
ON Semiconductor
11 Seiten, 172 KB
PZT751T1G Anwendungshinweis
ON Semiconductor
4 Seiten, 103 KB
PZT751T1G Notizdatei
ON Semiconductor
9 Seiten, 552 KB
PZT751T1G Andere Referenzen
ON Semiconductor
1 Seiten, 146 KB

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