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©2002 Fairchild Semiconductor Corporation RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B
RFD14N05L, RFD14N05LSM, RFP14N05L
14A, 50V, 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V-5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Features
• 14A, 50V
•r
DS(ON)
= 0.100
Ω
• Temperature Compensating PSPICE
®
Model
• Can be Driven Directly from CMOS, NMOS, and
TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA JEDEC TO-252AA
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
RFD14N05L TO-251AA 14N05L
RFD14N05LSM TO-252AA 14N05L
RFP14N05L TO-220AB FP14N05L
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A.
G
D
S
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet January 2002
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