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©2002 Fairchild Semiconductor Corporation RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Rev. B
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
17A, 60V, 0.071 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
Symbol
Features
• Ultra Low On-Resistance
-r
DS(ON)
= 0.063Ω, V
GS
= 10V
-r
DS(ON)
= 0.071Ω, V
GS
= 5V
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
©
Electrical Models
- Spice and SABER
©
Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
JEDEC TO-251AA JEDEC TO-252AA
JEDEC TO-220AB
DRAIN
(FLANGE)
DRAIN
SOURCE
RFD12N06RLE
GATE
RFD12N06RLESM
GATE
SOURCE
DRAIN
(FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
RFP12N06RLE
D
G
S
PART NUMBER PACKAGE BRAND
RFD12N06RLE TO-251AA 12N6LE
RFD12N06RLESM TO-252AA 12N6LE
RFP12N06RLE TO-220AB 12N06RLE
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, i.e. RFD12N06RLESM9A.
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±16 V
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 135
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
17
18
8
8
Figure 4
A
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
49
0.327
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet January 2002
Verzeichnis
