herunterladen
RK7002A
Transistors
Switching (60V, 300mA)
RK7002A
!
Features
1) Low on-resistance.
2) High ESD
3) High-speed switching.
4) Low-voltage drive (4V).
5) Easily designed drive circuits.
6) Easy to use in parallel.
!
!!
!
Structure
Silicon N-channel
MOSFET transistor
!
!!
!Equivalent circuit
(1)
(3)
(2)
∗Gate
Protection
Diode.
∗
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
!
!!
!
External dimensions
(Units : mm)
ROHM : SST3
EIAJ : SOT-23
0.45
0.95
0.15
0~0.1
0.2Min.
2.4
1.3
0.4
0.95
(
1
)
(
3
)
0.95
(
2
)
1.9
2.9
(1) Source
(2) Gate
(3) Drain
Abbreviated symbol : RKS
Each lead has same dimensions
!
!!
!Absolute maximum ratings (Ta=25°C)
Drain-source voltage
Gate-source voltage
Drain current
Drain reverse current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Pulsed
V
DSS
V
GSS
I
DR
P
D
∗
2
Tch
60 V
V
mA
mA
mW
°C
±20
300I
D
I
DRP
∗
1
A
I
DP
∗
1
A1.2
300
1.2
200
150
Tstg °C −55~
+
150
Symbol Limits Unit
Parameter
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When using 1×0.75×0.062 inch glass epoxy board.
Verzeichnis
