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SBL1645 Anwendungshinweis - Galaxy Semi-Conductor

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SBL1645 Anwendungshinweis

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OBSOLETE PART DISCONTINUED
SBL1630PT-SBL1660PT
DS23046 Rev. 5 - 4
1 of 3
www.diodes.com
August 2015
ã Diodes Incorporated
SBL1630PT - SBL1660PT
16A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
P
Q
K
S
M
H
R
D
C
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
·
Schottky Barrier Chip
·
Guard Ring Die Construction for Transient Protection
·
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward Voltage Drop
·
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
·
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
·
Case: TO-3P
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
·
Polarity: As Marked on Body
·
Ordering Information: See Last Page
·
Marking: Type Number
· Weight: 5.6 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
SBL
1630PT
SBL
1635PT
SBL
1640PT
SBL
1645PT
SBL
1650PT
SBL
1660PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 35 40 45 50 60 V
RMS Reverse Voltage
V
R(RMS)
21 24.5 28 31.5 35 42 V
Average Rectified Output Current
(Note 1) @ T
C
= 95°C
I
O
16 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
250 A
Forward Voltage Drop @ I
F
= 8.0A, T
C
= 25°C
V
FM
0.55 0.70 V
Peak Reverse Current @ T
C
= 25°C
at Rated DC Blocking Voltage @ T
C
= 100°C
I
RM
0.5
50
mA
Typical Total Capacitance (Note 2)
C
T
700 pF
Typical Thermal Resistance Junction to Case (Note 1)
R
qJC
3.5 °C/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150 °C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
TO-3P
Dim Min Max
A
1.88 2.08
B
4.68 5.36
C
20.63 22.38
D
18.5 21.5
E
2.1 2.4
G
0.51 0.76
H
15.38 16.25
J
1.90 2.70
K
2.9Æ 3.65Æ
L
3.78 4.50
M
5.2 5.7
N
0.89 1.53
P
1.82 2.46
Q
2.92 3.23
R
11.70 12.84
S
¾ 6.10
All Dimensions in mm
PART OBSOLETE - NO ALTERNATE PART
OBSOLETE
Verzeichnis

SBL1645 Datenblatt-PDF

SBL1645 Datenblatt PDF
Galaxy Semi-Conductor
2 Seiten, 144 KB
SBL1645 Anwendungshinweis
Galaxy Semi-Conductor
3 Seiten, 568 KB
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