herunterladen

AFT20S015NR1 AFT20S015GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 1.5 W RF power LDMOS transis tors are designed for cellular bas e
station applications covering the frequency range of 1805 to 2700 MHz.
2100 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQ
= 132 mA, P
out
= 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz 17.5 22.0 8.9 --43.0 -- 11
2140 MHz 17.6 22.0 9.0 --44.0 -- 1 2
2170 MHz 17.6 22.0 9.1 --44.0 -- 1 4
1800 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQ
= 132 mA, P
out
= 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz 18.0 21.0 9.2 --42.0 -- 11
1840 MHz 18.1 22.0 9.2 --44.0 -- 1 0
1880 MHz 18.0 22.0 9.1 --45.0 -- 1 0
2600 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQ
= 132 mA, P
out
= 2.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz 15.7 23.0 9.0 --45.0 -- 6
2400 MHz 16.0 23.0 8.8 --44.0 -- 7
2500 MHz 15.8 23.0 8.6 --43.0 -- 6
2600 MHz 15.8 21.0 8.5 --43.0 -- 7
2700 MHz 15.5 20.0 8.4 --42.0 -- 8
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
Document Number: AFT20S015N
Rev. 1, 11/2013
Freescale Semiconductor
Technical Data
1805–2700 MHz, 1.5 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
AFT20S015NR1
AFT20S015GNR1
T O -- 2 7 0 -- 2
PLASTIC
AFT20S015NR1
Figure 1. Pin Connections
(Top View)
RF
out
/V
DS
RF
in
/V
GS
Note: The backside of the package is the
source terminal for the transistor.
T O -- 2 7 0 -- 2 G U L L
PLASTIC
AFT20S015GNR1
Freescale Semiconductor, Inc., 2013.
A
ll rights reserved.